preliminary notice: this is not a final specification. some parametric limits are subject to change. a ug. 1999 3.0 0.275 0.65 1.1 6.4 4.4 ? a?? ?? drain source gate ?? ? ? a ? ? ? ? v v a a a a a w c c g FY7BCH-02B 20 10 7 49 7 1.5 6.0 1.6 C55~+150 C55~+150 0.035 2.5v drive v dss ............................................................ ...................... 20v r ds (on) (max) ............................................................ .. 21m w i d ............................................................ ................................ 7a mitsubishi po wer mosfet FY7BCH-02B high-speed switching use nc h po wer mosfet applica tion motor control, lamp control, solenoid control, dc-dc con v er te , etc tssop8 outline drawing dimensions in mm v gs = 0v v ds = 0v l = 10 m h t ypical v alue par ameter conditions symbol ratings unit v dss v gss i d i dm i da i s i sm p d t ch t stg dr ain-source v oltage gate-source v oltage dr ain current dr ain current (pulsed) av alanche current (pulsed) source current source current (pulsed) maxim um po w er dissipation channel temperature stor age temper ature w eight maximum ra tings (tc = 25 c) l l l l
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 0.8 17 21 0.119 20 1350 400 300 30 80 150 160 0.75 50 i d = 1ma, v gs = 0v v gs = 10v, v ds = 0v v ds = 20v, v gs = 0v i d = 1ma, v ds = 10v i d = 7a, v gs = 4v i d = 3.5a, v gs = 2.5v i d = 7a, v gs = 4v i d = 7a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 10v, i d = 3.5a, v gs = 4v, r gen = r gs = 50 w i s = 1.5a, v gs = 0v channel to ambiet i s = 1.5a, d is /d t = C50a/ m s 20 0.5 v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 0.1 0.1 1.3 21 30 0.147 1.10 78.1 drain-source breakdown voltage gate -source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol parameter test conditions v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) y fs c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr limits min. typ. max. unit electrical characteristics (tch = 25 c)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 0 8 16 24 32 40 10 ? 10 1 2 10 0 357 2 10 2 357 23 57 v gs = 2.5v tc = 25 c pulse test 4v 0 0.4 0.8 1.2 1.6 2.0 0 1.0 2.0 3.0 4.0 5.0 tc = 25 c pulse test i d = 14a 3a 7a 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 2v p d = 1.6w 1.5v 2 3 5 7 7 2 10 0 357 2 10 1 357 23 10 0 2 3 5 10 1 2 3 5 7 7 10 ? tw = 10 m s t c = 25 c single pulse 100 m s 100ms 10ms 1ms dc 0 0.4 0.8 1.2 1.6 2.0 0 200 50 100 150 v gs = 4v,3v,2.5v 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 3v p d = 1.6w 2v 2.5v 1.5v v gs = 4v tc = 25 c pulse test tc = 25 c pulse test drain current i d (a) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain-source voltage v ds (v) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) power dissipation derating curve case temperature t c ( c) power dissipation p d (w) performance curves
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 v ds =10v pulse test 0 10 20 30 40 50 0 1.0 2.0 3.0 4.0 5.0 tc = 25 c v ds = 10v pulse test 10 ? 2 10 0 357 2 10 1 357 2 2 3 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c v gs = 0v f = 1mh z 10 ? 10 0 23 57 10 1 23 57 10 1 10 0 2 3 3 7 5 2 10 2 7 2 3 5 t d(off) t d(on) t r tch = 25 c v gs = 4v v dd = 10v r gen = r gs = 50 w t f 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 125 c 75 c 25 c v gs = 0v t c = 25 c pulse test 0 1.0 2.0 3.0 4.0 5.0 0 8 16 24 32 40 7v 10v 15v v ds = i d =7a tch = 25 c t c = 25 c, 75 c,125 c t c = capacitance vs. drain-source voltage (typical) source-drain diode forward characteristics (typical) gate-source voltage vs.gate charge (typical) forward transfer admittance y fs (s) forward transfer admittance vs.drain current (typical) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) transfer characteristics (typical) drain-source voltage v ds (v) capacitance ciss, coss, crss (pf) switching characteristics (typical) drain current i d (a) switching time (ns) source-drain voltage v sd (v) source current i s (a) gate charge q g (nc) gate-source voltage v gs (v)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 23 57 10 3 10 ? 10 ? 10 ? 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma single pulse 0 0.4 0.8 1.2 1.6 2.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = 4v i d = 7a pulse test p dm tw d = t tw t transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-a) ( c/w) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) threshold voltage vs. channel temperature (typical) channel temperature tch ( c) channel temperature tch ( c) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) gate-source threshold voltage v gs (th) (v)
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